Infineon, Type N-Channel IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 232-6729
- Fabrikantnummer:
- IKW40N120CS7XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 tube van 30 eenheden)*
€ 113,85
(excl. BTW)
€ 137,76
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending 240 stuk(s) vanaf 14 januari 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 30 - 30 | € 3,795 | € 113,85 |
| 60 - 120 | € 3,605 | € 108,15 |
| 150 + | € 3,453 | € 103,59 |
*prijsindicatie
- RS-stocknr.:
- 232-6729
- Fabrikantnummer:
- IKW40N120CS7XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current Ic | 40A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 1 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V (Transient gate-emitter Voltage: ±25 V) | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Width | 16.3mm | |
| Length | 21.5mm | |
| Series | IKW40N120CS7 | |
| Height | 5.3mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current Ic 40A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 1 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V (Transient gate-emitter Voltage: ±25 V) | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Width 16.3mm | ||
Length 21.5mm | ||
Series IKW40N120CS7 | ||
Height 5.3mm | ||
Automotive Standard No | ||
The Infineon's 40 A TRENCHSTOP IGBT7 S7 discrete comes in TO-247 package with EC7 diode inside. It offers low VCEsat to achieve very low conduction losses in target applications and the co-packed very soft and fast emitter controlled diode helps to minimize switching losses contributing to overall low total losses. Potential applications include industrial drives, industrial power supplies and solar inverters.
Good controllability
Full rated free wheeling diode with improved softness
Higher power density without heatsink redesign
Ease to design to meet EMI requirement
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