Infineon IKWH40N65WR6XKSA1, Type N-Channel IGBT, 40 A 650 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 232-6740
- Fabrikantnummer:
- IKWH40N65WR6XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 2 eenheden)*
€ 8,35
(excl. BTW)
€ 10,104
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 78 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 4,175 | € 8,35 |
| 20 - 48 | € 3,72 | € 7,44 |
| 50 - 98 | € 3,46 | € 6,92 |
| 100 - 198 | € 3,22 | € 6,44 |
| 200 + | € 3,01 | € 6,02 |
*prijsindicatie
- RS-stocknr.:
- 232-6740
- Fabrikantnummer:
- IKWH40N65WR6XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current Ic | 40A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 175W | |
| Number of Transistors | 1 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.85V | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.21mm | |
| Standards/Approvals | JEDEC47/20/22 | |
| Series | IKWH40N65WR6 | |
| Width | 16.13mm | |
| Length | 21.1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current Ic 40A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 175W | ||
Number of Transistors 1 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.85V | ||
Maximum Operating Temperature 175°C | ||
Height 5.21mm | ||
Standards/Approvals JEDEC47/20/22 | ||
Series IKWH40N65WR6 | ||
Width 16.13mm | ||
Length 21.1mm | ||
Automotive Standard No | ||
The Infineon's 40 A reverse conducting TRENCHSTOP 5 WR6 IGBT comes in high creep age and clearance TO-247-3-HCC package. It is specifically optimized for PFC for RAC / CAC and Welding inverter application. Excellent price/performance ratio of WR6 IGBT allows access to the high performance technology also for cost sensitive customers. WR6 is offering lowest VCEsat, and Esw which allows the switching frequency up to 75 kHz. WR6 IGBT also enable more reliable design with the increased clearances and creep age distances.
Monolithically integrated diode
Lowest switching losses
Improved reliability against package contamination
Gerelateerde Links
- Infineon 40 A 650 V Through Hole
- Infineon IKWH20N65WR6XKSA1 40 A 650 V Through Hole
- Infineon IKW40N65H5FKSA1 40 A 650 V Through Hole
- Infineon IHW40N65R5XKSA1 40 A 650 V Through Hole
- Infineon 70 A 650 V Screw
- Infineon IKWH70N65WR6XKSA1 70 A 650 V Screw
- Infineon 100 A 650 V Through Hole
- Infineon 50 A 650 V Through Hole