onsemi FGH4L50T65SQD IGBT 650 V, 4-Pin TO-247-4LD, Surface
- RS-stocknr.:
- 241-0726
- Fabrikantnummer:
- FGH4L50T65SQD
- Fabrikant:
- onsemi
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 241-0726
- Fabrikantnummer:
- FGH4L50T65SQD
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 268W | |
| Package Type | TO-247-4LD | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 15 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 22.74 mm | |
| Series | FGH4L50T65SQD | |
| Height | 5.2mm | |
| Length | 15.8mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 268W | ||
Package Type TO-247-4LD | ||
Mount Type Surface | ||
Pin Count 4 | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 15 V | ||
Maximum Operating Temperature 175°C | ||
Width 22.74 mm | ||
Series FGH4L50T65SQD | ||
Height 5.2mm | ||
Length 15.8mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ON Semiconductor 650 V, 80 A FS4 high speed IGBT. This offer the optimum performance by balancing Vce(sat) and Eoff losses and controllable turnoff Vce overshoot. Well suited for solar inverter, UPS, EV charging stations, ESS and other high performance power conversion applications.
Positive temperature co-efficient
Easy paralleling operation
Low switching losses
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