onsemi IGBT Module 1000 V Q2PACK, Surface
- RS-stocknr.:
- 245-6973
- Fabrikantnummer:
- NXH350N100H4Q2F2P1G
- Fabrikant:
- onsemi
Subtotaal (1 tray van 36 eenheden)*
€ 5.585,148
(excl. BTW)
€ 6.758,028
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 14 september 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tray* |
|---|---|---|
| 36 + | € 155,143 | € 5.585,15 |
*prijsindicatie
- RS-stocknr.:
- 245-6973
- Fabrikantnummer:
- NXH350N100H4Q2F2P1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1000V | |
| Number of Transistors | 4 | |
| Maximum Power Dissipation Pd | 592W | |
| Package Type | Q2PACK | |
| Mount Type | Surface | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 12.3mm | |
| Series | NXH350N100H4Q2F2P1G | |
| Standards/Approvals | RoHS | |
| Length | 93.1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1000V | ||
Number of Transistors 4 | ||
Maximum Power Dissipation Pd 592W | ||
Package Type Q2PACK | ||
Mount Type Surface | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Height 12.3mm | ||
Series NXH350N100H4Q2F2P1G | ||
Standards/Approvals RoHS | ||
Length 93.1mm | ||
Automotive Standard No | ||
Si/SiC Hybrid Module - EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package Press-fit pins
The ON Semiconductor Three Level NPC Q2Pack Module is a high density, integrated power module combines high performance IGBTs with rugged anti parallel diodes.
Extremely efficient trench with field stop technology
Low switching loss reduces system power dissipation
Module design offers high power density
Low inductive layout
Low package height
These devices are Pb free, Halogen Free and are RoHS Compliant
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