STMicroelectronics STGH30H65DFB-2AG IGBT, 30 A 650 V H2PAK-2, Through Hole
- RS-stocknr.:
- 248-4893
- Fabrikantnummer:
- STGH30H65DFB-2AG
- Fabrikant:
- STMicroelectronics
Subtotaal (1000 eenheden, op een rol van 1000)*
€ 1.958,00
(excl. BTW)
€ 2.369,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 07 oktober 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 1000 + | € 1,958 | € 1.958,00 |
*prijsindicatie
- RS-stocknr.:
- 248-4893
- Fabrikantnummer:
- STGH30H65DFB-2AG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 30A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 260W | |
| Package Type | H2PAK-2 | |
| Mount Type | Through Hole | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.55V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.7mm | |
| Standards/Approvals | RoHS | |
| Width | 15.8mm | |
| Length | 10.4mm | |
| Series | STGH30H65DFB | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 30A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 260W | ||
Package Type H2PAK-2 | ||
Mount Type Through Hole | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.55V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 4.7mm | ||
Standards/Approvals RoHS | ||
Width 15.8mm | ||
Length 10.4mm | ||
Series STGH30H65DFB | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics product is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCEsat temperature coefficient and very tight parameter distribution result in safer paralleling operation.
AEC-Q101 qualified
High speed switching series
Safer paralleling
Tight parameter distribution
Low thermal resistance
Soft and very fast recovery antiparallel diode
Gerelateerde Links
- STMicroelectronics STGH30H65DFB-2AG IGBT Through Hole
- STMicroelectronics GH50H65DRB2-7AG IGBT 7-Pin H2PAK-7, Surface
- STMicroelectronics STGWA30HP65FB 30 A 650 V Through Hole
- STMicroelectronics Schottky Diode 30 A, 2-Pin 650 V H2PAK STPSC30G065G2Y
- STMicroelectronics N-Channel MOSFET 650 V, 7-Pin H2PAK-7 SCT040H65G3AG
- STMicroelectronics STGWT80H65DFB 3-Pin TO-3P, Through Hole
- STMicroelectronics STGW80H65DFB 3-Pin TO-247, Through Hole
- STMicroelectronics STGWA30M65DF2AG IGBT 3-Pin TO-247 LL, Through Hole