STMicroelectronics IGBT, 30 A 650 V H2PAK-2, Through Hole

Bekijk alle IGBTs

Subtotaal (1 rol van 1000 eenheden)*

€ 2.019,00

(excl. BTW)

€ 2.443,00

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Tijdelijk niet op voorraad
  • Verzending vanaf 16 maart 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
Per rol*
1000 +€ 2,019€ 2.019,00

*prijsindicatie

RS-stocknr.:
248-4893
Fabrikantnummer:
STGH30H65DFB-2AG
Fabrikant:
STMicroelectronics
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

30A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

260W

Package Type

H2PAK-2

Mount Type

Through Hole

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.55V

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

175°C

Series

STGH30H65DFB

Standards/Approvals

RoHS

Width

15.8 mm

Length

10.4mm

Height

4.7mm

Automotive Standard

AEC-Q101

The STMicroelectronics product is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCEsat temperature coefficient and very tight parameter distribution result in safer paralleling operation.

AEC-Q101 qualified

High speed switching series

Safer paralleling

Tight parameter distribution

Low thermal resistance

Soft and very fast recovery antiparallel diode

Gerelateerde Links