Bourns BIDD05N60T IGBT 600 V TO-252
- RS-stocknr.:
- 253-3500
- Fabrikantnummer:
- BIDD05N60T
- Fabrikant:
- Bourns
Subtotaal (1 verpakking van 5 eenheden)*
€ 6,91
(excl. BTW)
€ 8,36
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 2.430 stuk(s) vanaf 18 maart 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 + | € 1,382 | € 6,91 |
*prijsindicatie
- RS-stocknr.:
- 253-3500
- Fabrikantnummer:
- BIDD05N60T
- Fabrikant:
- Bourns
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Bourns | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 82W | |
| Package Type | TO-252 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Series | BIDD05N60T | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Bourns | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 82W | ||
Package Type TO-252 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Series BIDD05N60T | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure improves the robustness of the device.
600V, 5A, Low VCE(sat)
Trench-Gate Field-Stop technology
Optimized for conduction
Robust
RoHS compliant
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