Infineon FP75R12N2T7PB11BPSA1 IGBT 1200 V
- RS-stocknr.:
- 253-9837
- Fabrikantnummer:
- FP75R12N2T7PB11BPSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 99,02
(excl. BTW)
€ 119,81
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk |
|---|---|
| 1 - 1 | € 99,02 |
| 2 - 4 | € 94,08 |
| 5 + | € 90,12 |
*prijsindicatie
- RS-stocknr.:
- 253-9837
- Fabrikantnummer:
- FP75R12N2T7PB11BPSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 20mW | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.85V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 107.5mm | |
| Standards/Approvals | RoHS | |
| Series | FP75R12N2T7PB11B | |
| Height | 17mm | |
| Width | 45 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 20mW | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.85V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 107.5mm | ||
Standards/Approvals RoHS | ||
Series FP75R12N2T7PB11B | ||
Height 17mm | ||
Width 45 mm | ||
Automotive Standard No | ||
The Infineon FP75 series is a EconoPIM 2 module with IGBT and emitter controlled diode and PressFIT or NTC or TIM.
Low VCEsat
Overload operation up to 175°C
High power and thermal cycling capability
Integrated NTC temperature sensor
Copper base plate
PessFIT contact technology
Pre-applied thermal interface material
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