Infineon FS75R12W2T7B11BOMA1 Full Bridge IGBT, 75 A 1200 V AG-EASY2B-711, Chassis
- RS-stocknr.:
- 258-0906
- Fabrikantnummer:
- FS75R12W2T7B11BOMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 44,63
(excl. BTW)
€ 54,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 25 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 1 | € 44,63 |
| 2 - 4 | € 42,40 |
| 5 - 9 | € 40,61 |
| 10 - 19 | € 38,82 |
| 20 + | € 37,04 |
*prijsindicatie
- RS-stocknr.:
- 258-0906
- Fabrikantnummer:
- FS75R12W2T7B11BOMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current Ic | 75A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 20mW | |
| Configuration | Full Bridge | |
| Package Type | AG-EASY2B-711 | |
| Mount Type | Chassis | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.77V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current Ic 75A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 20mW | ||
Configuration Full Bridge | ||
Package Type AG-EASY2B-711 | ||
Mount Type Chassis | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.77V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon EasyPACK 2B 1200 V, 75 A six-pack IGBT module with TRENCHSTOP IGBT7, emitter controlled 7 diode, NTC and PressFIT contact technology.
Al2O3 substrate with low thermal resistance
High power density
Compact design
PressFIT contact technology
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