Infineon IGBT, 24 A 600 V TO-263
- RS-stocknr.:
- 258-7063
- Fabrikantnummer:
- IKB10N60TATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 1000 eenheden)*
€ 615,00
(excl. BTW)
€ 744,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 03 september 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 1000 + | € 0,615 | € 615,00 |
*prijsindicatie
- RS-stocknr.:
- 258-7063
- Fabrikantnummer:
- IKB10N60TATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 24A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 110W | |
| Package Type | TO-263 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Series | TRENCHSTOPTM | |
| Standards/Approvals | JEDEC1 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 24A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 110W | ||
Package Type TO-263 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 175°C | ||
Series TRENCHSTOPTM | ||
Standards/Approvals JEDEC1 | ||
Automotive Standard No | ||
The Infineon IGBT discrete with anti parallel diode in TO-263 package. It has significant improvement of static as well as dynamic performance of the device, due to combination of trench cell and field stop concept. It has low conduction and switching losses also.
Lowest VCEsat drop for lower conduction losses
Easy parallel switching capability due to positive temperature coefficient in VCEsat
Very soft, fast recovery antiparallel emitter controlled diode
High ruggedness, temperature stable behaviour
Low gate charg
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