Infineon IGBT, 80 A 1200 V, 3-Pin TO-247
- RS-stocknr.:
- 260-5091
- Fabrikantnummer:
- IKQ40N120CH3XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 tube van 30 eenheden)*
€ 158,04
(excl. BTW)
€ 191,22
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 30 - 30 | € 5,268 | € 158,04 |
| 60 - 120 | € 5,005 | € 150,15 |
| 150 + | € 4,794 | € 143,82 |
*prijsindicatie
- RS-stocknr.:
- 260-5091
- Fabrikantnummer:
- IKQ40N120CH3XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 80A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 500W | |
| Package Type | TO-247 | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.35V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.1mm | |
| Width | 15.9 mm | |
| Length | 41.2mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 80A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 500W | ||
Package Type TO-247 | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.35V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Height 5.1mm | ||
Width 15.9 mm | ||
Length 41.2mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon hard switching high speed IGBT3 in TO247 PLUS package with soft, fast anti-parallel emitter controlled diode.
High efficiency in hard switching and resonant topologies
Easy paralleling capability due to positive temperature coefficient in VCEsat
Low gate charge QG
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