STMicroelectronics STGWA35IH135DF2, Bi-Directional-Channel Single Collector IGBT, 35 A 1350 V, 3-Pin TO-247, Through
- RS-stocknr.:
- 275-1348P
- Fabrikantnummer:
- STGWA35IH135DF2
- Fabrikant:
- STMicroelectronics
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- Plus verzending 222 stuk(s) vanaf 23 maart 2026
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|---|---|
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*prijsindicatie
- RS-stocknr.:
- 275-1348P
- Fabrikantnummer:
- STGWA35IH135DF2
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 35A | |
| Maximum Collector Emitter Voltage Vceo | 1350V | |
| Maximum Power Dissipation Pd | 416W | |
| Number of Transistors | 1 | |
| Package Type | TO-247 | |
| Configuration | Single Collector | |
| Mount Type | Through Hole | |
| Channel Type | Bi-Directional | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 19.92mm | |
| Height | 21mm | |
| Standards/Approvals | RoHS | |
| Width | 15.8 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 35A | ||
Maximum Collector Emitter Voltage Vceo 1350V | ||
Maximum Power Dissipation Pd 416W | ||
Number of Transistors 1 | ||
Package Type TO-247 | ||
Configuration Single Collector | ||
Mount Type Through Hole | ||
Channel Type Bi-Directional | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 19.92mm | ||
Height 21mm | ||
Standards/Approvals RoHS | ||
Width 15.8 mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The STMicroelectronics IGBT 1350 V IH2 series has been developed using an Advanced proprietary trench gate field stop structure, whose performance is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop forward voltage is included. The result is a product specifically designed to maximize efficiency for any resonant and soft switching applications.
Designed for soft commutation
Minimized tail current
Tight parameter distribution
Low thermal resistance