Vishay VS-GT100TS065N, N-Channel Half Bridge IGBT, 96 A 650 V, 7-Pin INT-A-PAK, Panel
- RS-stocknr.:
- 276-6400
- Fabrikantnummer:
- VS-GT100TS065N
- Fabrikant:
- Vishay
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- RS-stocknr.:
- 276-6400
- Fabrikantnummer:
- VS-GT100TS065N
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Maximum Continuous Collector Current Ic | 96A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 259W | |
| Number of Transistors | 2 | |
| Package Type | INT-A-PAK | |
| Configuration | Half Bridge | |
| Mount Type | Panel | |
| Channel Type | N | |
| Pin Count | 7 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | UL E78996 | |
| Length | 94.4mm | |
| Height | 30mm | |
| Width | 35.4mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Maximum Continuous Collector Current Ic 96A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 259W | ||
Number of Transistors 2 | ||
Package Type INT-A-PAK | ||
Configuration Half Bridge | ||
Mount Type Panel | ||
Channel Type N | ||
Pin Count 7 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals UL E78996 | ||
Length 94.4mm | ||
Height 30mm | ||
Width 35.4mm | ||
Automotive Standard No | ||
- Land van herkomst:
- IT
The Vishay IGBT features Gen 4 FRED Pt technology anti parallel diodes with ultra soft reverse recovery characteristics. It is optimized for high current inverter stages (AC TIG welding machines).
UL approved
Very low conduction losses
Low EMI
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