- RS-stocknr.:
- 829-4379
- Fabrikantnummer:
- STGP3HF60HD
- Fabrikant:
- STMicroelectronics
175 op voorraad - levertijd is 1 werkdag(en).
Toegevoegd
Prijs Elk (in een pakket van 5)
€ 1,038
(excl. BTW)
€ 1,256
(incl. BTW)
Aantal stuks | Per stuk | Per pak* |
5 - 5 | € 1,038 | € 5,19 |
10 - 95 | € 0,852 | € 4,26 |
100 - 495 | € 0,598 | € 2,99 |
500 + | € 0,518 | € 2,59 |
*prijsindicatie |
- RS-stocknr.:
- 829-4379
- Fabrikantnummer:
- STGP3HF60HD
- Fabrikant:
- STMicroelectronics
Wetgeving en compliance
Productomschrijving
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
---|---|
Maximum Continuous Collector Current | 7.5 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 38 W |
Package Type | TO-220 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 10.4 x 4.6 x 15.75mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |