Infineon FS50R07N2E4BOSA1 3 Phase Bridge IGBT Module, 70 A 650 V, 28-Pin ECONO2, PCB Mount
- RS-stocknr.:
- 838-6970
- Fabrikantnummer:
- FS50R07N2E4BOSA1
- Fabrikant:
- Infineon
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RS heeft dit product niet meer op voorraad.
- RS-stocknr.:
- 838-6970
- Fabrikantnummer:
- FS50R07N2E4BOSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current | 70 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 190 W | |
| Configuration | 3 Phase Bridge | |
| Package Type | ECONO2 | |
| Mounting Type | PCB Mount | |
| Channel Type | N | |
| Pin Count | 28 | |
| Switching Speed | 1MHz | |
| Transistor Configuration | 3 Phase | |
| Dimensions | 107.5 x 45 x 17mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -40 °C | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current 70 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 190 W | ||
Configuration 3 Phase Bridge | ||
Package Type ECONO2 | ||
Mounting Type PCB Mount | ||
Channel Type N | ||
Pin Count 28 | ||
Switching Speed 1MHz | ||
Transistor Configuration 3 Phase | ||
Dimensions 107.5 x 45 x 17mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -40 °C | ||
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