Infineon IKW25N120H3FKSA1, Type N-Channel IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 906-2892
- Fabrikantnummer:
- IKW25N120H3FKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 10,27
(excl. BTW)
€ 12,426
(incl. BTW)
Voeg 18 eenheden toe voor gratis bezorging
Op voorraad
- 4 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 16 stuk(s) vanaf 25 februari 2026
- Plus verzending 210 stuk(s) vanaf 30 april 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 4 | € 5,135 | € 10,27 |
| 6 - 18 | € 4,435 | € 8,87 |
| 20 - 38 | € 4,21 | € 8,42 |
| 40 - 98 | € 4,025 | € 8,05 |
| 100 + | € 3,455 | € 6,91 |
*prijsindicatie
- RS-stocknr.:
- 906-2892
- Fabrikantnummer:
- IKW25N120H3FKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 50A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 326W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.7V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, Pb-free lead plating, JEDEC | |
| Series | TrenchStop | |
| Automotive Standard | No | |
| Energy Rating | 4.3mJ | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 50A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 326W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.7V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, Pb-free lead plating, JEDEC | ||
Series TrenchStop | ||
Automotive Standard No | ||
Energy Rating 4.3mJ | ||
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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