Infineon IKW50N120CH7XKSA1, Type N-Channel IGBT, 86 A 1200 V, 3-Pin TO-247, Through Hole

RS-stocknr.:: 273-2979
Fabrikantnummer:: IKW50N120CH7XKSA1
Fabrikant:: Infineon

Infineon IKW50N120CH7XKSA1, Type N-Channel IGBT, 86 A 1200 V, 3-Pin TO-247, Through Hole

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Subtotaal (1 tube van 30 eenheden)*

€ 120,33

(excl. BTW)

€ 145,59

(incl. BTW)

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Plus verzending 90 stuk(s) vanaf 02 november 2026

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Aantal stuks	Per stuk	Per tube*
30 - 30	€ 4,011	€ 120,33
60 +	€ 3,702	€ 111,06

*prijsindicatie

RS-stocknr.:: 273-2979
Fabrikantnummer:: IKW50N120CH7XKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Maximum Continuous Collector Current Ic	86A
	Product Type	IGBT
	Maximum Collector Emitter Voltage Vceo	1200V
	Maximum Power Dissipation Pd	398W
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	Type N
	Pin Count	3
	Maximum Collector Emitter Saturation Voltage VceSAT	2V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	175°C
	Length	21.1mm
	Series	IKW
	Width	16.13mm
	Standards/Approvals	RoHS, JEDEC47/20/22
	Height	5.21mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Maximum Continuous Collector Current Ic 86A
	Product Type IGBT
	Maximum Collector Emitter Voltage Vceo 1200V
	Maximum Power Dissipation Pd 398W
	Package Type TO-247
	Mount Type Through Hole
	Channel Type Type N
	Pin Count 3
	Maximum Collector Emitter Saturation Voltage VceSAT 2V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 175°C
	Length 21.1mm
	Series IKW
	Width 16.13mm
	Standards/Approvals RoHS, JEDEC47/20/22
	Height 5.21mm
	Automotive Standard No

Datasheet - IKW50N120CH7XKSA1

Infineon IKW Series IGBT, 1200V Gate-Emitter Voltage, 86A Continuous Collector Current - IKW50N120CH7XKSA1

This IGBT is a power semiconductor device intended for high-current switching in power electronic systems. It combines a high gate-emitter voltage rating with substantial continuous collector current handling to support demanding switching tasks. The component is supplied in a through-hole TO-247 package and is designed to operate across a wide ambient temperature range for industrial environments.

Features and Benefits:

• 1200V gate-emitter voltage enables high-voltage switching capability
• 86A continuous collector current supports heavy-load operation
• 2V collector-emitter saturation voltage reduces conduction losses
• 398W power dissipation allows sustained thermal throughput
• Operates from -40°C to 175°C for broad temperature resilience

Applications

• Suitable for industrial motor drive inverter stages
• Used for high-current power transistor roles in converters
• Ideal for power electronics modules requiring through-hole mounting
• Can be used in high-temperature switching environments
• Used with designs needing a 3-pin power semiconductor

What package and mounting style does it use?

It is supplied in a TO-247 package and intended for through-hole mounting.

What approvals relate to material and manufacturing standards?

It meets RoHS requirements and follows JEDEC47/20/22 standards.

What physical connector count should board designers expect?

The device presents three electrical pins for connection.

What are the device external dimensions for mechanical planning?

The package measures 21.1mm in length, 16.13mm in width and 5.21mm in height.