onsemi, Single Type P-Channel JFET-Channel JFET, 15 V -7 to -60 mA, 3-Pin SOT-23
- RS-stocknr.:
- 163-0037
- Fabrikantnummer:
- MMBFJ175LT1G
- Fabrikant:
- onsemi
Subtotaal (1 rol van 3000 eenheden)*
€ 261,00
(excl. BTW)
€ 315,00
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,087 | € 261,00 |
*prijsindicatie
- RS-stocknr.:
- 163-0037
- Fabrikantnummer:
- MMBFJ175LT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | JFET | |
| Channel Type | Type P | |
| Sub Type | JFET | |
| Maximum Drain Source Voltage Vds | 15V | |
| Configuration | Single | |
| Mount Type | Surface | |
| Package Type | SOT-23 | |
| Maximum Power Dissipation Pd | 225mW | |
| Maximum Gate Source Voltage Vgs | -25 V | |
| Maximum Drain Source Resistance Rds | 125Ω | |
| Minimum Operating Temperature | -55°C | |
| Drain Source Current Ids | -7 to -60 mA | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Height | 1.01mm | |
| Standards/Approvals | No | |
| Width | 1.4 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type JFET | ||
Channel Type Type P | ||
Sub Type JFET | ||
Maximum Drain Source Voltage Vds 15V | ||
Configuration Single | ||
Mount Type Surface | ||
Package Type SOT-23 | ||
Maximum Power Dissipation Pd 225mW | ||
Maximum Gate Source Voltage Vgs -25 V | ||
Maximum Drain Source Resistance Rds 125Ω | ||
Minimum Operating Temperature -55°C | ||
Drain Source Current Ids -7 to -60 mA | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Height 1.01mm | ||
Standards/Approvals No | ||
Width 1.4 mm | ||
Automotive Standard No | ||
P-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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