onsemi MMBFJ111, Single Type N-Channel N-Channel Switch-Channel JFET, 15 V 20 mA, 3-Pin SOT-23
- RS-stocknr.:
- 806-4311
- Fabrikantnummer:
- MMBFJ111
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 rol van 50 eenheden)*
€ 15,10
(excl. BTW)
€ 18,25
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 50 - 450 | € 0,302 | € 15,10 |
| 500 - 950 | € 0,26 | € 13,00 |
| 1000 + | € 0,225 | € 11,25 |
*prijsindicatie
- RS-stocknr.:
- 806-4311
- Fabrikantnummer:
- MMBFJ111
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | JFET | |
| Sub Type | N-Channel Switch | |
| Maximum Drain Source Voltage Vds | 15V | |
| Configuration | Single | |
| Mount Type | Surface | |
| Package Type | SOT-23 | |
| Maximum Drain Source Resistance Rds | 30Ω | |
| Maximum Power Dissipation Pd | 350mW | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Drain Source Current Ids | 20 mA | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 2.9mm | |
| Height | 1.04mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type JFET | ||
Sub Type N-Channel Switch | ||
Maximum Drain Source Voltage Vds 15V | ||
Configuration Single | ||
Mount Type Surface | ||
Package Type SOT-23 | ||
Maximum Drain Source Resistance Rds 30Ω | ||
Maximum Power Dissipation Pd 350mW | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Drain Source Current Ids 20 mA | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 2.9mm | ||
Height 1.04mm | ||
Automotive Standard No | ||
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.