STMicroelectronics MDmesh Type N-Channel MOSFET, 21 A, 500 V Enhancement, 3-Pin TO-220FP STP12NM50FP
- RS-stocknr.:
- 151-409
- Fabrikantnummer:
- STP12NM50FP
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 tube van 50 eenheden)*
€ 92,65
(excl. BTW)
€ 112,10
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 900 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 450 | € 1,853 | € 92,65 |
| 500 + | € 1,76 | € 88,00 |
*prijsindicatie
- RS-stocknr.:
- 151-409
- Fabrikantnummer:
- STP12NM50FP
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | MDmesh | |
| Package Type | TO-220FP | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 350mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 10.4 mm | |
| Length | 15.85mm | |
| Height | 30.6mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series MDmesh | ||
Package Type TO-220FP | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 350mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 10.4 mm | ||
Length 15.85mm | ||
Height 30.6mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The STMicroelectronics N-channel Power MOSFET, This device developed using MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. These devices offer extremely low on resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST'sproprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
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