STMicroelectronics MDmesh K5 Type N-Channel MOSFET, 9 A, 950 V Enhancement, 3-Pin TO-220FP STF6N95K5
- RS-stocknr.:
- 151-419
- Fabrikantnummer:
- STF6N95K5
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 tube van 50 eenheden)*
€ 73,65
(excl. BTW)
€ 89,10
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 950 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 450 | € 1,473 | € 73,65 |
| 500 + | € 1,40 | € 70,00 |
*prijsindicatie
- RS-stocknr.:
- 151-419
- Fabrikantnummer:
- STF6N95K5
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Package Type | TO-220FP | |
| Series | MDmesh K5 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.25Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Power Dissipation Pd | 25W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 950V | ||
Package Type TO-220FP | ||
Series MDmesh K5 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.25Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Power Dissipation Pd 25W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The STMicroelectronics Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on resistance and ultra low gate charge for applications requiring superior power density and high efficiency.
Industry’s lowest RDS(on) x area
Industry’s best FoM
Ultra low gate charge
100% avalanche tested
Zener protected
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