STMicroelectronics SuperMESH Type N-Channel MOSFET, 4 A, 600 V Enhancement, 3-Pin TO-252 STD4NK60ZT4
- RS-stocknr.:
- 151-439
- Fabrikantnummer:
- STD4NK60ZT4
- Fabrikant:
- STMicroelectronics
Subtotaal (1 rol van 2500 eenheden)*
€ 1.022,50
(excl. BTW)
€ 1.237,50
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending 2.500 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2500 + | € 0,409 | € 1.022,50 |
*prijsindicatie
- RS-stocknr.:
- 151-439
- Fabrikantnummer:
- STD4NK60ZT4
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Series | SuperMESH | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 18.8nC | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.39mm | |
| Width | 6.73 mm | |
| Length | 10.34mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Series SuperMESH | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 18.8nC | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Operating Temperature 150°C | ||
Height 2.39mm | ||
Width 6.73 mm | ||
Length 10.34mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitance
Zener protected
Gerelateerde Links
- STMicroelectronics SuperMESH N-Channel MOSFET 600 V, 3-Pin DPAK STD4NK60ZT4
- STMicroelectronics MDmesh 4 A 3-Pin DPAK STD4NK60ZT4
- STMicroelectronics SuperMESH N-Channel MOSFET 600 V, 3-Pin DPAK STD2HNK60Z
- STMicroelectronics SuperMESH N-Channel MOSFET 600 V, 3-Pin DPAK STD3NK60ZT4
- STMicroelectronics MDmesh 1 A 3-Pin DPAK STD1NK60T4
- STMicroelectronics MDmesh 2.4 A 3-Pin DPAK STD3NK60ZT4
- STMicroelectronics SuperMESH N-Channel MOSFET 500 V, 3-Pin DPAK STD5NK50ZT4
- STMicroelectronics SuperMESH N-Channel MOSFET 1000 V, 3-Pin DPAK STD2NK100Z
