STMicroelectronics SuperMESH Type N-Channel SuperMESH Power MOSFET, 4 A, 600 V Enhancement, 3-Pin TO-263 STB4NK60ZT4
- RS-stocknr.:
- 687-5190
- Fabrikantnummer:
- STB4NK60ZT4
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 5 eenheden)*
€ 11,76
(excl. BTW)
€ 14,23
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 12 oktober 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 5 | € 2,352 | € 11,76 |
| 10 - 20 | € 2,104 | € 10,52 |
| 25 - 95 | € 1,99 | € 9,95 |
| 100 - 495 | € 1,484 | € 7,42 |
| 500 + | € 1,26 | € 6,30 |
*prijsindicatie
- RS-stocknr.:
- 687-5190
- Fabrikantnummer:
- STB4NK60ZT4
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | SuperMESH Power MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SuperMESH | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 18.8nC | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 70W | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.4mm | |
| Height | 4.6mm | |
| Standards/Approvals | JEDEC JESD97 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type SuperMESH Power MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SuperMESH | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 18.8nC | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 70W | ||
Maximum Operating Temperature 150°C | ||
Length 10.4mm | ||
Height 4.6mm | ||
Standards/Approvals JEDEC JESD97 | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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