STMicroelectronics SuperMESH Type N-Channel MOSFET, 17 A, 500 V Enhancement, 3-Pin TO-220
- RS-stocknr.:
- 151-443
- Fabrikantnummer:
- STP20NK50Z
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
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€ 27,66
(excl. BTW)
€ 33,47
(incl. BTW)
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- Plus verzending 3.495 stuk(s) vanaf 22 juli 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 5,532 | € 27,66 |
| 50 - 120 | € 4,774 | € 23,87 |
| 125 + | € 3,84 | € 19,20 |
*prijsindicatie
- RS-stocknr.:
- 151-443
- Fabrikantnummer:
- STP20NK50Z
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | SuperMESH | |
| Package Type | TO-220 | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.27Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 190W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 119nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series SuperMESH | ||
Package Type TO-220 | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.27Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 190W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 119nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitance
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