STMicroelectronics SuperMESH Type N-Channel MOSFET, 3 A, 800 V Enhancement, 3-Pin TO-252 STD4NK80ZT4
- RS-stocknr.:
- 151-900P
- Fabrikantnummer:
- STD4NK80ZT4
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
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€ 289,60
(excl. BTW)
€ 350,40
(incl. BTW)
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Aantal stuks | Per stuk |
|---|---|
| 200 - 480 | € 1,448 |
| 500 - 980 | € 1,339 |
| 1000 - 1980 | € 1,235 |
| 2000 + | € 1,187 |
*prijsindicatie
- RS-stocknr.:
- 151-900P
- Fabrikantnummer:
- STD4NK80ZT4
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-252 | |
| Series | SuperMESH | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.5Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 22.5nC | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.1mm | |
| Height | 2.4mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-252 | ||
Series SuperMESH | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.5Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 22.5nC | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 10.1mm | ||
Height 2.4mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The STMicroelectronics Power MOSFET, it is high-voltage device with Zener-protected N-channel developed using the SuperMESH technology ,an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Gate charge minimized
Very low intrinsic capacitance
Zener-protected