STMicroelectronics SuperMESH N-Channel MOSFET, 85 A, 1000 V Enhancement, 3-Pin TO-252 STD2NK100Z
- RS-stocknr.:
- 151-902P
- Fabrikantnummer:
- STD2NK100Z
- Fabrikant:
- STMicroelectronics
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*prijsindicatie
- RS-stocknr.:
- 151-902P
- Fabrikantnummer:
- STD2NK100Z
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 85A | |
| Maximum Drain Source Voltage Vds | 1000V | |
| Package Type | TO-252 | |
| Series | SuperMESH | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 70W | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Maximum Operating Temperature | 159°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 85A | ||
Maximum Drain Source Voltage Vds 1000V | ||
Package Type TO-252 | ||
Series SuperMESH | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 70W | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Maximum Operating Temperature 159°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The STMicroelectronics Power MOSFET, it is high-voltage device with Zener-protected N-channel developed using the SuperMESH technology ,an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Gate charge minimized
Very low intrinsic capacitance
Zener-protected