STMicroelectronics SCT060HU N-Channel MOSFET, 30 A, 750 V Enhancement, 7-Pin HU3PAK SCT060HU75G3AG
- RS-stocknr.:
- 152-111
- Fabrikantnummer:
- SCT060HU75G3AG
- Fabrikant:
- STMicroelectronics
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We weten niet of dit artikel weer voorradig zal zijn, het wordt door de fabrikant stopgezet.
- RS-stocknr.:
- 152-111
- Fabrikantnummer:
- SCT060HU75G3AG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Series | SCT060HU | |
| Package Type | HU3PAK | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 58mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 3V | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Maximum Gate Source Voltage Vgs | 18V | |
| Maximum Operating Temperature | 175°C | |
| Width | 19mm | |
| Standards/Approvals | RoHS | |
| Length | 14.1mm | |
| Height | 3.6mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 750V | ||
Series SCT060HU | ||
Package Type HU3PAK | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 58mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 3V | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Maximum Gate Source Voltage Vgs 18V | ||
Maximum Operating Temperature 175°C | ||
Width 19mm | ||
Standards/Approvals RoHS | ||
Length 14.1mm | ||
Height 3.6mm | ||
Automotive Standard No | ||
- Land van herkomst:
- JP
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
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