STMicroelectronics SCT060HU Type N-Channel MOSFET, 30 A, 750 V Enhancement, 7-Pin HU3PAK SCT060HU75G3AG
- RS-stocknr.:
- 152-111
- Fabrikantnummer:
- SCT060HU75G3AG
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 rol van 1 eenheid)*
€ 11,42
(excl. BTW)
€ 13,82
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Rol(len) | Per rol |
|---|---|
| 1 - 9 | € 11,42 |
| 10 - 99 | € 10,27 |
| 100 + | € 9,49 |
*prijsindicatie
- RS-stocknr.:
- 152-111
- Fabrikantnummer:
- SCT060HU75G3AG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Series | SCT060HU | |
| Package Type | HU3PAK | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 58mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Forward Voltage Vf | 3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 14.1mm | |
| Height | 3.6mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 750V | ||
Series SCT060HU | ||
Package Type HU3PAK | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 58mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Forward Voltage Vf 3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 14.1mm | ||
Height 3.6mm | ||
Automotive Standard No | ||
- Land van herkomst:
- JP
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
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