STMicroelectronics SCT060HU Type N-Channel MOSFET, 30 A, 750 V Enhancement, 7-Pin HU3PAK SCT060HU75G3AG
- RS-stocknr.:
- 152-111
- Fabrikantnummer:
- SCT060HU75G3AG
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 rol van 1 eenheid)*
€ 11,12
(excl. BTW)
€ 13,46
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 3.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Rol(len) | Per rol |
|---|---|
| 1 - 9 | € 11,12 |
| 10 - 99 | € 10,01 |
| 100 + | € 9,24 |
*prijsindicatie
- RS-stocknr.:
- 152-111
- Fabrikantnummer:
- SCT060HU75G3AG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Series | SCT060HU | |
| Package Type | HU3PAK | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 58mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 3V | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±18 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 14.1mm | |
| Height | 3.6mm | |
| Standards/Approvals | RoHS | |
| Width | 19 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 750V | ||
Series SCT060HU | ||
Package Type HU3PAK | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 58mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 3V | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±18 V | ||
Maximum Operating Temperature 175°C | ||
Length 14.1mm | ||
Height 3.6mm | ||
Standards/Approvals RoHS | ||
Width 19 mm | ||
Automotive Standard No | ||
- Land van herkomst:
- JP
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
Gerelateerde Links
- STMicroelectronics SCT060HU SiC N-Channel MOSFET 750 V, 7-Pin HU3PAK SCT060HU75G3AG
- STMicroelectronics SCT SiC N-Channel MOSFET 750 V, 7-Pin HU3PAK SCT060HU75G3AG
- STMicroelectronics SCT SiC N-Channel MOSFET 1200 V, 7-Pin HU3PAK SCT070HU120G3AG
- STMicroelectronics N-Channel MOSFET 650 V HU3PAK SCT055HU65G3AG
- STMicroelectronics N-Channel MOSFET 650 V HU3PAK STHU32N65DM6AG
- STMicroelectronics STHU65 N-Channel MOSFET 650 V, 7-Pin HU3PAK STHU65N050DM9AG
- STMicroelectronics STHU60 N-Channel MOSFET 600 V, 7-Pin HU3PAK STHU60N046DM9AG
- STMicroelectronics STHU36N N-Channel MOSFET 600 V, 7-Pin HU3PAK STHU36N60DM6AG