DiodesZetex N-Channel MOSFET, 1.7 A, 20 V Enhancement, 3-Pin SOT-23 ZXM61N02FTA
- RS-stocknr.:
- 154-958
- Fabrikantnummer:
- ZXM61N02FTA
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 25 eenheden)*
€ 12,90
(excl. BTW)
€ 15,60
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending 2.200 stuk(s) vanaf 06 november 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 125 | € 0,516 | € 12,90 |
| 150 - 725 | € 0,297 | € 7,43 |
| 750 - 1475 | € 0,274 | € 6,85 |
| 1500 + | € 0,268 | € 6,70 |
*prijsindicatie
- RS-stocknr.:
- 154-958
- Fabrikantnummer:
- ZXM61N02FTA
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 1.7A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 3.4nC | |
| Maximum Power Dissipation Pd | 806mW | |
| Maximum Gate Source Voltage Vgs | -12V, +12V | |
| Forward Voltage Vf | 950mV | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.05mm | |
| Width | 1.4mm | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 1.7A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 3.4nC | ||
Maximum Power Dissipation Pd 806mW | ||
Maximum Gate Source Voltage Vgs -12V, +12V | ||
Forward Voltage Vf 950mV | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.05mm | ||
Width 1.4mm | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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