STMicroelectronics SCT 1 N-Channel MOSFET, 30 A, 1200 V Enhancement, 4-Pin Hip-247-4 SCT070W120G3-4
- RS-stocknr.:
- 214-964
- Fabrikantnummer:
- SCT070W120G3-4
- Fabrikant:
- STMicroelectronics
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 214-964
- Fabrikantnummer:
- SCT070W120G3-4
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCT | |
| Package Type | Hip-247-4 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCT | ||
Package Type Hip-247-4 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
- Land van herkomst:
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
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