STMicroelectronics STL125N10F8AG Type N-Channel MOSFET, 125 A, 100 V Enhancement, 8-Pin PowerFLAT STL125N10F8AG
- RS-stocknr.:
- 214-996
- Fabrikantnummer:
- STL125N10F8AG
- Fabrikant:
- STMicroelectronics
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- Verzending 3.000 stuk(s) vanaf 17 juni 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 2,64 |
| 10 - 99 | € 2,38 |
| 100 - 499 | € 2,20 |
| 500 - 999 | € 2,04 |
| 1000 + | € 1,82 |
*prijsindicatie
- RS-stocknr.:
- 214-996
- Fabrikantnummer:
- STL125N10F8AG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 125A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerFLAT | |
| Series | STL125N10F8AG | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 150W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 125A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerFLAT | ||
Series STL125N10F8AG | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 150W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
The STMicroelectronics 100 V N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure. It ensures a state-of-the-art of figure of merit for very low on-state resistance while reducing internal capacitances and gate charge for Faster and more efficient switching.
Low gate charge Qg
Wettable flank package
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