Nexperia MOSFETs Type N-Channel MOSFET, 330 A, 55 V Enhancement, 5-Pin LFPAK PSMN1R2-55SLHAX

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Verpakkingsopties
RS-stocknr.:
219-464
Fabrikantnummer:
PSMN1R2-55SLHAX
Fabrikant:
Nexperia
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Merk

Nexperia

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

330A

Maximum Drain Source Voltage Vds

55V

Series

MOSFETs

Package Type

LFPAK

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

1.03mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

375W

Typical Gate Charge Qg @ Vgs

180nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Height

1.6mm

Length

8mm

Width

8 mm

Standards/Approvals

RoHS

Automotive Standard

No

Land van herkomst:
MY
The Nexperia N-Channel MOSFET features NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Avalanche rated and 100 % tested

Superfast switching with soft body diode recovery for low spiking and ringing

Narrow VGS(th) rating for easy paralleling and improved current sharing

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