Nexperia NextPower-S3 technology Type N-Channel MOSFET, 240 A, 40 V Enhancement, 5-Pin LFPAK PSMN1R4-40YLDX

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  • Verzending vanaf 06 juli 2026
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Verpakkingsopties
RS-stocknr.:
219-474
Fabrikantnummer:
PSMN1R4-40YLDX
Fabrikant:
Nexperia
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Merk

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

240A

Maximum Drain Source Voltage Vds

40V

Series

NextPower-S3 technology

Package Type

LFPAK

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

238W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

45nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

Land van herkomst:
PH
The Nexperia N-Channel MOSFET features Advanced TrenchMOS Super junction technology. This product has been designed and qualified for high performance power switching applications. It is designed for high-performance applications, including synchronous rectification, DC-to-DC converters, server power supplies, brushless DC motor control and battery protection. It offers high efficiency and reliable performance across a wide range of power management tasks.

Low parasitic inductance and resistance

High reliability clip bonded and solder die attach Power SO8 package

Wave solder able

Superfast switching with soft recovery

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