onsemi NTMFS3 N-Channel MOSFET, 83 A, 40 V Enhancement, 5-Pin DFN-5 NTMFS3D1N04XMT1G
- RS-stocknr.:
- 220-549
- Fabrikantnummer:
- NTMFS3D1N04XMT1G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (10 eenheden, op een band van 10)*
€ 8,48
(excl. BTW)
€ 10,26
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending 1.500 stuk(s) vanaf 18 augustus 2027
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Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 10 - 90 | € 0,848 | € 8,48 |
| 100 - 240 | € 0,808 | € 8,08 |
| 250 - 490 | € 0,746 | € 7,46 |
| 500 - 990 | € 0,69 | € 6,90 |
| 1000 + | € 0,662 | € 6,62 |
*prijsindicatie
- RS-stocknr.:
- 220-549
- Fabrikantnummer:
- NTMFS3D1N04XMT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 83A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NTMFS3 | |
| Package Type | DFN-5 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 3.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 39W | |
| Typical Gate Charge Qg @ Vgs | 15.6nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.15mm | |
| Height | 1mm | |
| Standards/Approvals | RoHS | |
| Length | 6.15mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 83A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NTMFS3 | ||
Package Type DFN-5 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 3.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 39W | ||
Typical Gate Charge Qg @ Vgs 15.6nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 5.15mm | ||
Height 1mm | ||
Standards/Approvals RoHS | ||
Length 6.15mm | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The ON Semiconductor Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
Halogen Free
RoHS Compliant
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