onsemi NTBL N-Channel MOSFET, 37 A, 650 V Enhancement, 8-Pin HPSOF-8L NTBL075N065SC1
- RS-stocknr.:
- 220-564
- Fabrikantnummer:
- NTBL075N065SC1
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
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€ 7,56
(excl. BTW)
€ 9,15
(incl. BTW)
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Rol(len) | Per rol |
|---|---|
| 1 - 9 | € 7,56 |
| 10 - 99 | € 6,82 |
| 100 - 499 | € 6,28 |
| 500 - 999 | € 5,83 |
| 1000 + | € 4,73 |
*prijsindicatie
- RS-stocknr.:
- 220-564
- Fabrikantnummer:
- NTBL075N065SC1
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 37A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | NTBL | |
| Package Type | HPSOF-8L | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 85mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 59nC | |
| Maximum Gate Source Voltage Vgs | 22.6V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 4.4V | |
| Maximum Power Dissipation Pd | 139W | |
| Maximum Operating Temperature | 175°C | |
| Length | 9.9mm | |
| Width | 10.38mm | |
| Standards/Approvals | RoHS | |
| Height | 2.3mm | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 37A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series NTBL | ||
Package Type HPSOF-8L | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 85mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 59nC | ||
Maximum Gate Source Voltage Vgs 22.6V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 4.4V | ||
Maximum Power Dissipation Pd 139W | ||
Maximum Operating Temperature 175°C | ||
Length 9.9mm | ||
Width 10.38mm | ||
Standards/Approvals RoHS | ||
Height 2.3mm | ||
- Land van herkomst:
- PH
The ON Semiconductor Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
High Speed Switching with Low Capacitance
RoHS Compliant
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