onsemi NTB Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin HPSOF-8L NTBL045N065SC1

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Verpakkingsopties
RS-stocknr.:
254-7667
Fabrikantnummer:
NTBL045N065SC1
Fabrikant:
onsemi
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Merk

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

58A

Maximum Drain Source Voltage Vds

1200V

Series

NTB

Package Type

HPSOF-8L

Mount Type

Through Hole

Pin Count

7

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

117W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

22 V

Typical Gate Charge Qg @ Vgs

105nC

Forward Voltage Vf

4.5V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

Silicon Carbide (SiC) MOSFET - EliteSiC, 33 mohm, 650 V, M2, TOLL Silicon Carbide (SiC) MOSFET - 33 mohm, 650 V, M2, TOLL


The ON Semiconductor NTB series of a silicon carbide mosfet uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition with the low on resistance and compact chip size. It ensures a low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Zero reverse recovery current of body diode

Ultra low gate charge

High speed switching and low capacitance

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