onsemi NVMFWS Type N-Channel MOSFET, 201 A, 80 V Enhancement, 8-Pin SO-8FL NVMFWS1D9N08XT1G
- RS-stocknr.:
- 220-571
- Fabrikantnummer:
- NVMFWS1D9N08XT1G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 rol van 2 eenheden)*
€ 7,09
(excl. BTW)
€ 8,578
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 1.488 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2 - 18 | € 3,545 | € 7,09 |
| 20 - 198 | € 3,20 | € 6,40 |
| 200 - 998 | € 2,95 | € 5,90 |
| 1000 - 1998 | € 2,735 | € 5,47 |
| 2000 + | € 2,225 | € 4,45 |
*prijsindicatie
- RS-stocknr.:
- 220-571
- Fabrikantnummer:
- NVMFWS1D9N08XT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 201A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | NVMFWS | |
| Package Type | SO-8FL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 164W | |
| Forward Voltage Vf | 0.82V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.9 mm | |
| Height | 1mm | |
| Length | 4.9mm | |
| Standards/Approvals | AEC and PPAP Capable | |
| Automotive Standard | AEC-Q | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 201A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series NVMFWS | ||
Package Type SO-8FL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.9mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 164W | ||
Forward Voltage Vf 0.82V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 5.9 mm | ||
Height 1mm | ||
Length 4.9mm | ||
Standards/Approvals AEC and PPAP Capable | ||
Automotive Standard AEC-Q | ||
- Land van herkomst:
- MY
The ON Semiconductor MOSFET has Low QRR. This device are Pb−Free, Halogen Free/BFR Free.
Low RDS(on) to Minimize Conduction Losses
RoHS Compliant
Gerelateerde Links
- onsemi NTMFS N-Channel MOSFET 80 V, 8-Pin SO-8FL NTMFS2D1N08XT1G
- onsemi NVMFWS N-Channel MOSFET 80 V, 5-Pin DFNW5 NVMFWS1D5N08XT1G
- onsemi NVMFWS N-Channel MOSFET 80 V, 5-Pin DFNW5 NVMFWS2D5N08XT1G
- onsemi N-Channel MOSFET 40 V, 8-Pin SO-8FL NTMFS5C426NLT1G
- onsemi N-Channel MOSFET 30 V, 8-Pin SO-8FL NTMFS4C10NT1G
- onsemi N-Channel MOSFET 60 V, 8-Pin SO-8FL NTMFS5C646NLT1G
- onsemi N-Channel MOSFET 60 V, 8-Pin SO-8FL NTMFS5C604NLT1G
- onsemi N-Channel MOSFET 120 V, 8-Pin SO-8FL NTMFS008N12MCT1G
