ROHM Nch+Nch HP8K 2 Type N-Channel MOSFET, 100 V Enhancement, 8-Pin HSOP-8 HP8KE7TB1
- RS-stocknr.:
- 264-873
- Fabrikantnummer:
- HP8KE7TB1
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 rol van 5 eenheden)*
€ 8,03
(excl. BTW)
€ 9,715
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 100 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5 - 45 | € 1,606 | € 8,03 |
| 50 - 95 | € 1,528 | € 7,64 |
| 100 - 495 | € 1,414 | € 7,07 |
| 500 - 995 | € 1,304 | € 6,52 |
| 1000 + | € 1,252 | € 6,26 |
*prijsindicatie
- RS-stocknr.:
- 264-873
- Fabrikantnummer:
- HP8KE7TB1
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HP8K | |
| Package Type | HSOP-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 19.6mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 26W | |
| Typical Gate Charge Qg @ Vgs | 19.8nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Nch+Nch | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HP8K | ||
Package Type HSOP-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 19.6mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 26W | ||
Typical Gate Charge Qg @ Vgs 19.8nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Nch+Nch | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The ROHM power MOSFET features a dual N-channel configuration with a voltage rating of 100V and a current capacity of 24A. Designed in an HSOP8 package and offers low on-resistance.
Low on-resistance
Small Surface Mount Package (HSOP8)
Pb-free lead plating and RoHS compliant
Halogen Free
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