ROHM HP8KF7H Dual N-Channel Single MOSFETs, 150 V Enhancement, 8-Pin HSOP-8 HP8KF7HTB1
- RS-stocknr.:
- 687-364
- Fabrikantnummer:
- HP8KF7HTB1
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 rol van 2 eenheden)*
€ 3,05
(excl. BTW)
€ 3,69
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 19 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2 - 18 | € 1,525 | € 3,05 |
| 20 - 48 | € 1,345 | € 2,69 |
| 50 - 198 | € 1,205 | € 2,41 |
| 200 - 998 | € 0,97 | € 1,94 |
| 1000 + | € 0,95 | € 1,90 |
*prijsindicatie
- RS-stocknr.:
- 687-364
- Fabrikantnummer:
- HP8KF7HTB1
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Dual N | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | HP8KF7H | |
| Package Type | HSOP-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 62mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 26W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Length | 6.1mm | |
| Width | 6.1 mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Dual N | ||
Maximum Drain Source Voltage Vds 150V | ||
Series HP8KF7H | ||
Package Type HSOP-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 62mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 26W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Length 6.1mm | ||
Width 6.1 mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- JP
The ROHM N channel power MOSFET designed to efficiently manage power in various electronic applications. With a low on-resistance of 62mΩ and a compact HSOP8 package, this MOSFET ensures superior thermal management and high reliability. Its specifications support a continuous drain current of ±18.5A, making it ideal for demanding tasks such as motor drives. Offering excellent energy efficiency and compliance with RoHS and halogen-free standards, it seamlessly integrates into advanced electronic designs while ensuring environmental responsibility.
Optimised for low on resistance, enhancing overall efficiency
Compact HSOP8 package allows for space-saving designs
Ideal for a variety of applications, including motor drives
Meets RoHS and halogen-free requirements for environmental safety
High continuous and pulsed drain current ratings ensure reliability under load
Excellent thermal management with low thermal resistance ratings
Designed for high-performance switching applications with minimal delay
Stable operation across a wide temperature range from -55 to +150°C
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