ROHM R60 Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-252 R6009RND3TL1
- RS-stocknr.:
- 264-922
- Fabrikantnummer:
- R6009RND3TL1
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 rol van 5 eenheden)*
€ 5,19
(excl. BTW)
€ 6,28
(incl. BTW)
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- Plus verzending 100 stuk(s) vanaf 29 december 2025
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Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5 - 45 | € 1,038 | € 5,19 |
| 50 - 95 | € 0,986 | € 4,93 |
| 100 - 495 | € 0,914 | € 4,57 |
| 500 - 995 | € 0,84 | € 4,20 |
| 1000 + | € 0,812 | € 4,06 |
*prijsindicatie
- RS-stocknr.:
- 264-922
- Fabrikantnummer:
- R6009RND3TL1
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | R60 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.665Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Typical Gate Charge Qg @ Vgs | 22.0nC | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series R60 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.665Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Typical Gate Charge Qg @ Vgs 22.0nC | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ROHM Presto MOS features a 600V rating and 9A current capacity in a TO-252 DPAK package with an integrated high-speed diode. It is a fast trr power MOSFET, making it ideal for high-efficiency switching applications.
Fast reverse recovery time trr
Low on-resistance
Fast switching speed
Drive circuits can be simple
Pb-free plating and RoHS compliant
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