ROHM RV7 N-Channel MOSFET, 2 A, 60 V Enhancement, 3-Pin DFN1212-3 RV7L020GNTCR1
- RS-stocknr.:
- 265-382P
- Fabrikantnummer:
- RV7L020GNTCR1
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal 100 eenheden (geleverd op een doorlopende strip)*
€ 23,20
(excl. BTW)
€ 28,10
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 100 stuk(s) vanaf 12 oktober 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 100 - 225 | € 0,232 |
| 250 - 475 | € 0,215 |
| 500 - 975 | € 0,198 |
| 1000 + | € 0,19 |
*prijsindicatie
- RS-stocknr.:
- 265-382P
- Fabrikantnummer:
- RV7L020GNTCR1
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | DFN1212-3 | |
| Series | RV7 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 157mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 2.1nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 1.1W | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.2mm | |
| Height | 500μm | |
| Standards/Approvals | No | |
| Length | 1.2mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type DFN1212-3 | ||
Series RV7 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 157mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 2.1nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 1.1W | ||
Maximum Operating Temperature 150°C | ||
Width 1.2mm | ||
Height 500μm | ||
Standards/Approvals No | ||
Length 1.2mm | ||
Automotive Standard No | ||
The ROHM MOSFET is designed for switching and load switching applications. Housed in a leadless ultra small SMD plastic package of 1.2x1.2x0.5 mm with an exposed drain pad, it offers excellent thermal conduction, ensuring efficient performance in compact electronic designs.
RoHS compliant
Low on resistance
Pb free lead plating