onsemi NTB Type N-Channel MOSFET, 70 A, 650 V Enhancement, 7-Pin TO-263 NTBG023N065M3S
- RS-stocknr.:
- 277-040
- Fabrikantnummer:
- NTBG023N065M3S
- Fabrikant:
- onsemi
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€ 10,61
(excl. BTW)
€ 12,84
(incl. BTW)
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 10,61 |
| 10 - 99 | € 9,55 |
| 100 - 499 | € 8,80 |
| 500 - 999 | € 8,17 |
| 1000 + | € 6,64 |
*prijsindicatie
- RS-stocknr.:
- 277-040
- Fabrikantnummer:
- NTBG023N065M3S
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | NTB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 69nC | |
| Maximum Power Dissipation Pd | 263W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 6V | |
| Maximum Operating Temperature | 175°C | |
| Length | 9.2mm | |
| Height | 15.4mm | |
| Standards/Approvals | RoHS with exemption 7a, Pb-Free 2LI (on Second Level Interconnection) | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series NTB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 69nC | ||
Maximum Power Dissipation Pd 263W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 6V | ||
Maximum Operating Temperature 175°C | ||
Length 9.2mm | ||
Height 15.4mm | ||
Standards/Approvals RoHS with exemption 7a, Pb-Free 2LI (on Second Level Interconnection) | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The ON Semiconductor SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.
Ultra low gate charge
High speed switching with low capacitance
100% avalanche tested
Device is Halide Free and RoHS compliant
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