onsemi NTH Type N-Channel MOSFET, 67 A, 650 V Enhancement, 4-Pin TO-247-4L NTH4L023N065M3S
- RS-stocknr.:
- 277-043
- Fabrikantnummer:
- NTH4L023N065M3S
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 10,90
(excl. BTW)
€ 13,19
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 17 juni 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 10,90 |
| 10 - 99 | € 9,82 |
| 100 - 499 | € 9,05 |
| 500 - 999 | € 8,40 |
| 1000 + | € 6,82 |
*prijsindicatie
- RS-stocknr.:
- 277-043
- Fabrikantnummer:
- NTH4L023N065M3S
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 67A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | NTH | |
| Package Type | TO-247-4L | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 6V | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 245W | |
| Typical Gate Charge Qg @ Vgs | 69nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS with exemption 7a, Halide Free, Pb-Free 2LI | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 67A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series NTH | ||
Package Type TO-247-4L | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 6V | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 245W | ||
Typical Gate Charge Qg @ Vgs 69nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS with exemption 7a, Halide Free, Pb-Free 2LI | ||
- Land van herkomst:
- CN
The ON Semiconductor SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.
Ultra low gate charge
High speed switching with low capacitance
100% avalanche tested
Device is Halide Free and RoHS compliant
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