onsemi NTH Type N-Channel MOSFET, 70 A, 650 V Enhancement, 3-Pin TO-247-3L NTHL023N065M3S
- RS-stocknr.:
- 277-044
- Fabrikantnummer:
- NTHL023N065M3S
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 10,58
(excl. BTW)
€ 12,80
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 18 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 10,58 |
| 10 - 99 | € 9,53 |
| 100 - 499 | € 8,78 |
| 500 - 999 | € 8,15 |
| 1000 + | € 6,61 |
*prijsindicatie
- RS-stocknr.:
- 277-044
- Fabrikantnummer:
- NTHL023N065M3S
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247-3L | |
| Series | NTH | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 69nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 6V | |
| Maximum Power Dissipation Pd | 263W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS with exemption 7a, Halide Free, Pb-Free 2LI | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247-3L | ||
Series NTH | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 69nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 6V | ||
Maximum Power Dissipation Pd 263W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS with exemption 7a, Halide Free, Pb-Free 2LI | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The ON Semiconductor SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.
Ultra low gate charge
High speed switching with low capacitance
100% avalanche tested
Device is Halide Free and RoHS compliant
Gerelateerde Links
- onsemi NTH SiC N-Channel MOSFET 650 V, 3-Pin TO-247-4L NTHL032N065M3S
- onsemi NTH SiC N-Channel MOSFET 650 V, 4-Pin TO-247-4L NTH4L032N065M3S
- onsemi NTH SiC N-Channel MOSFET 650 V, 4-Pin TO-247-4L NTH4L023N065M3S
- onsemi NVH SiC N-Channel MOSFET 650 V, 3-Pin TO-247-4L NVHL023N065M3S
- onsemi NTH SiC N-Channel MOSFET Transistor 1200 V, 3-Pin TO-247 NTHL160N120SC1
- onsemi NTH SiC N-Channel MOSFET 750 V, 7-Pin TO-247-4L NTH4L018N075SC1
- onsemi NTH SiC N-Channel MOSFET Transistor 1200 V, 4-Pin TO-247-4 NTH4L160N120SC1
- onsemi NTH SiC N-Channel MOSFET Transistor 1200 V, 4-Pin TO-247-4 NTH4L020N120SC1