onsemi NXH Type N-Channel MOSFET, 145 A, 1200 V Enhancement, 18-Pin PIM18 NXH008P120M3F1PTG
- RS-stocknr.:
- 277-050
- Fabrikantnummer:
- NXH008P120M3F1PTG
- Fabrikant:
- onsemi
Subtotaal (1 eenheid)*
€ 89,22
(excl. BTW)
€ 107,96
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 28 stuk(s) vanaf 10 augustus 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 + | € 89,22 |
*prijsindicatie
- RS-stocknr.:
- 277-050
- Fabrikantnummer:
- NXH008P120M3F1PTG
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 145A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | PIM18 | |
| Series | NXH | |
| Mount Type | Snap-in | |
| Pin Count | 18 | |
| Maximum Drain Source Resistance Rds | 10.9mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 6.2V | |
| Typical Gate Charge Qg @ Vgs | 419nC | |
| Maximum Power Dissipation Pd | 34.2W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 145A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type PIM18 | ||
Series NXH | ||
Mount Type Snap-in | ||
Pin Count 18 | ||
Maximum Drain Source Resistance Rds 10.9mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 6.2V | ||
Typical Gate Charge Qg @ Vgs 419nC | ||
Maximum Power Dissipation Pd 34.2W | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ON Semiconductor Power Module contains an 8 mΩ, 1200V SiC MOSFET half-bridge and a thermistor, all housed in an F1 package. This module is designed for high-efficiency power applications, making it ideal for use in solar inverters, uninterruptible power supplies (UPS), electric vehicle charging stations, and industrial power systems.
Press fit pins
Pb free
Halide free and RoHS compliant
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