onsemi NXH Type N-Channel MOSFET, 105 A, 1200 V Enhancement, 18-Pin PIM18 NXH010P120M3F1PTG
- RS-stocknr.:
- 277-052
- Fabrikantnummer:
- NXH010P120M3F1PTG
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 eenheid)*
€ 77,39
(excl. BTW)
€ 93,64
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 27 stuk(s) vanaf 10 augustus 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 77,39 |
| 10 + | € 69,65 |
*prijsindicatie
- RS-stocknr.:
- 277-052
- Fabrikantnummer:
- NXH010P120M3F1PTG
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 105A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | PIM18 | |
| Series | NXH | |
| Mount Type | Snap-in | |
| Pin Count | 18 | |
| Maximum Drain Source Resistance Rds | 24.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 272W | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 314nC | |
| Forward Voltage Vf | 6V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 105A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type PIM18 | ||
Series NXH | ||
Mount Type Snap-in | ||
Pin Count 18 | ||
Maximum Drain Source Resistance Rds 24.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 272W | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 314nC | ||
Forward Voltage Vf 6V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
The ON Semiconductor Power Module contains a 10 mΩ, 1200V SiC MOSFET half-bridge and a thermistor, all integrated into an F1 package. This module is well-suited for high-performance applications, including solar inverters, uninterruptible power supplies (UPS), electric vehicle charging stations, and industrial power systems.
Press fit pins
Pb free
Halide free and RoHS compliant
Gerelateerde Links
- onsemi NXH Type N-Channel MOSFET 1200 V Enhancement, 18-Pin PIM18 NXH008P120M3F1PTG
- onsemi NXH Type N-Channel MOSFET 1200 V Enhancement, 18-Pin PIM18 NXH015P120M3F1PTG
- onsemi NXH Type N-Channel MOSFET 1200 V Enhancement, 18-Pin PIM18 NXH030P120M3F1PTG
- onsemi NXH Type N-Channel MOSFET 1200 V Enhancement, 34-Pin PIM34 NXH011F120M3F2PTHG
- onsemi NXH Type N-Channel MOSFET 1200 V Enhancement, 34-Pin PIM34 NXH007F120M3F2PTHG
- onsemi NXH Type N-Channel MOSFET 1200 V Enhancement, 29-Pin PIM29 NXH008T120M3F2PTHG
- onsemi NXH Type N-Channel MOSFET 1200 V Enhancement, 36-Pin PIM36 NXH006P120M3F2PTHG
- onsemi NXH Type N-Channel MOSFET 1200 V Enhancement, 22-Pin PIM22 NXH030F120M3F1PTG