Infineon OptiMOS Type N-Channel MOSFET, 56 A, 150 V Enhancement, 8-Pin PG-WSON-8 BSC160N15NS5SCATMA1

Bekijk alle MOSFETs
Momenteel niet beschikbaar
Sorry, we weten niet wanneer dit weer voorradig zal zijn.
RS-stocknr.:
284-650
Fabrikantnummer:
BSC160N15NS5SCATMA1
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

56A

Maximum Drain Source Voltage Vds

150V

Package Type

PG-WSON-8

Series

OptiMOS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

16mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

115W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon OptiMOS Power MOSFET is engineered to deliver exceptional performance in high frequency switching applications. With a robust 150V rating, it serves as a reliable solution for industrial and automotive electronics. The dual side cooled PG WSON 8 package ensures minimal thermal resistance, allowing for efficient heat dissipation even under heavy load conditions. Designed for N channel operation, this MOSFET excels in synchronous rectification, making it Ideal for power management tasks where efficiency and reliability are paramount. Manufacturers can Trust this component to meet stringent requirements, delivering effective and stable performance in demanding environments.

Optimised for high frequency operation

Dual side cooling lowers thermal resistance

Pb free lead plating for RoHS compliance

Excellent gate charge performance boosts efficiency

Ideal for synchronous rectification applications

Operates at high temperatures without efficiency loss

Qualified to JEDEC standards for industry

Gerelateerde Links