Infineon OptiMOS Type N-Channel MOSFET, 171 A, 100 V Enhancement, 8-Pin PG-WSON-8 BSC023N08NS5SCATMA1

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RS-stocknr.:
284-636
Fabrikantnummer:
BSC023N08NS5SCATMA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

171A

Maximum Drain Source Voltage Vds

100V

Series

OptiMOS

Package Type

PG-WSON-8

Mount Type

Surface

Pin Count

8

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

188W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon OptiMOS Power MOSFET is engineered to excel in demanding applications requiring high efficiency and robust performance. Designed with an innovative PG WSON 8 package, this transistor delivers excellent thermal management, ensuring optimal heat dissipation during operation. Moreover, its dual side cooling capability significantly enhances thermal performance, and the extended operational temperature range allows for greater versatility in various environments. With a focus on reliability, this device has undergone rigorous testing to ensure it meets the stringent quality standards expected in industrial applications, making it a reliable choice for engineers looking to improve system performance while managing thermal constraints.

High efficiency minimizes energy loss

Dual side cooling enhances thermal management

Compact design for space saving integration

Meets high reliability standards

Suitable for various industrial applications

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