Infineon OptiMOS SiC N-Channel MOSFET, 504 A, 60 V, 8-Pin PG-HSOG-8-1 IAUTN06S5N008GATMA1

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RS-stocknr.:
284-704
Fabrikantnummer:
IAUTN06S5N008GATMA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

N

Maximum Continuous Drain Current

504 A

Maximum Drain Source Voltage

60 V

Package Type

PG-HSOG-8-1

Series

OptiMOS

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon OptiMOS 5 automotive power MOSFET is engineered for optimal performance in demanding automotive applications. The OptiMOS 5 series showcases innovative design and robust construction, ensuring reliability and efficiency in various automotive scenarios. With advanced electrical testing and an impressive operating temperature range, this component excels in environments where high performance is critical. Designed with an emphasis on quality, it surpasses AEC Q101 standards, providing peace of mind for manufacturers and end users alike. Whether integrating into electric vehicles or conventional automotive designs, this MOSFET delivers the reliability and stability required in modern automotive technologies.

Automotive specific design ensures compatibility
Low on state resistance enhances efficiency
Withstands extreme temperatures for reliability
MSL1 rating supports 260°C peak reflow
100% avalanche tested for safety assurance
Extended qualifications ensure superior quality
Compact PG HSOG 8 1 package for space efficiency

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