Infineon CoolSiC MOSFET 650 V G1 N-Channel MOSFET, 59 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R083M1HXUMA1
- RS-stocknr.:
- 284-730
- Fabrikantnummer:
- IMT65R083M1HXUMA1
- Fabrikant:
- Infineon
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- RS-stocknr.:
- 284-730
- Fabrikantnummer:
- IMT65R083M1HXUMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Series | CoolSiC MOSFET 650 V G1 | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 59 A | |
| Maximum Drain Source Voltage (Vds) | 650 V | |
| Channel Mode | Enhancement | |
| Pin Count | 8 | |
| Package Type | PG-HSOF-8 | |
| Automotive Standard | No | |
| Maximum Drain Source Resistance (Rds) | 111 mΩ | |
| Maximum Gate Source Voltage (Vgs) | 23 V | |
| Maximum Operating Temperature | 175 °C | |
| Maximum Power Dissipation (Pd) | 158 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Surface | |
| Standards/Approvals | RoHS Compliant | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Series CoolSiC MOSFET 650 V G1 | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 59 A | ||
Maximum Drain Source Voltage (Vds) 650 V | ||
Channel Mode Enhancement | ||
Pin Count 8 | ||
Package Type PG-HSOF-8 | ||
Automotive Standard No | ||
Maximum Drain Source Resistance (Rds) 111 mΩ | ||
Maximum Gate Source Voltage (Vgs) 23 V | ||
Maximum Operating Temperature 175 °C | ||
Maximum Power Dissipation (Pd) 158 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Surface | ||
Standards/Approvals RoHS Compliant | ||
The Infineon 650 V CoolSiC MOSFET is engineered with cutting edge silicon carbide technology, offering unmatched efficiency and reliability for demanding applications. This next generation component is designed to optimise performance across various high temperature and challenging operating environments. Its innovative design, refined over 20 years, effortlessly combines high operational reliability with user friendly integration. The increase in power density and reduction in system size makes it an Ideal choice for applications such as solar inverters, electric vehicle charging infrastructure, and energy storage solutions, allowing for seamless implementation in power supply systems.
Optimised switching behaviour enhances efficiency
Robust body diode ensures reliable commutation
Designed for high temperature operations
Simplified integration into existing circuits
Exceptional thermal performance for demanding environments
Superior avalanche capability for system safety
Significant reduction in switching losses
Ideal for high power density applications
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