Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET, 59 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R083M1HXUMA1
- RS-stocknr.:
- 284-730
- Fabrikantnummer:
- IMT65R083M1HXUMA1
- Fabrikant:
- Infineon
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- RS-stocknr.:
- 284-730
- Fabrikantnummer:
- IMT65R083M1HXUMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 59A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-HSOF-8 | |
| Series | CoolSiC MOSFET 650 V G1 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 111mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Maximum Power Dissipation Pd | 158W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 59A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-HSOF-8 | ||
Series CoolSiC MOSFET 650 V G1 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 111mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Maximum Power Dissipation Pd 158W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon 650 V CoolSiC MOSFET is engineered with cutting edge silicon carbide technology, offering unmatched efficiency and reliability for demanding applications. This next generation component is designed to optimise performance across various high temperature and challenging operating environments. Its innovative design, refined over 20 years, effortlessly combines high operational reliability with user friendly integration. The increase in power density and reduction in system size makes it an Ideal choice for applications such as solar inverters, electric vehicle charging infrastructure, and energy storage solutions, allowing for seamless implementation in power supply systems.
Optimised switching behaviour enhances efficiency
Robust body diode ensures reliable commutation
Designed for high temperature operations
Simplified integration into existing circuits
Exceptional thermal performance for demanding environments
Superior avalanche capability for system safety
Significant reduction in switching losses
Ideal for high power density applications
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