Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET, 44 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R057M1HXUMA1
- RS-stocknr.:
- 284-724
- Fabrikantnummer:
- IMT65R057M1HXUMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 2000 eenheden)*
€ 15.472,00
(excl. BTW)
€ 18.722,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 01 april 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2000 + | € 7,736 | € 15.472,00 |
*prijsindicatie
- RS-stocknr.:
- 284-724
- Fabrikantnummer:
- IMT65R057M1HXUMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 44A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-HSOF-8 | |
| Series | CoolSiC MOSFET 650 V G1 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Maximum Power Dissipation Pd | 203W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 44A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-HSOF-8 | ||
Series CoolSiC MOSFET 650 V G1 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Maximum Power Dissipation Pd 203W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon CoolSiC MOSFET 650 V G1 showcases Advanced silicon carbide technology, meticulously designed for high performance and reliability in demanding applications. Capitalising on over two decades of optimisation, this MOSFET delivers exceptional efficiency and ease of use, making it an Ideal choice for various implementations, including solar inverters and electric vehicle charging systems. Its robust features ensure reliable operation in high temperature environments, paving the way for more Compact and efficient power designs. Enhanced with a fast body diode and superior gate oxide reliability, this product stands out in its category, offering a unique balance of performance and user friendliness. Perfect for engineers striving for excellence within power supply circuits, this MOSFET embodies innovation and reliability, setting a new Benchmark in the industry.
Optimised for high current switching
Enhanced avalanche capability for robustness
Compatible with standard drivers for flexibility
Kelvin source configuration reduces switching losses
High performance and reliability combined
Ideal for continuous hard commutation
Compact design enhances power density
Qualified for industrial applications per JEDEC standards
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