Infineon 600V CoolMOS SiC N-Channel MOSFET, 112 A, 600 V, 22-Pin PG-HDSOP-22 IPDQ60R020CFD7XTMA1

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RS-stocknr.:
284-741
Fabrikantnummer:
IPDQ60R020CFD7XTMA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

N

Maximum Continuous Drain Current

112 A

Maximum Drain Source Voltage

600 V

Package Type

PG-HDSOP-22

Series

600V CoolMOS

Mounting Type

Surface Mount

Pin Count

22

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon MOSFET features a CoolMOS CFD7 series introduces a ground breaking power transistor specifically engineered for high voltage applications. With a remarkable voltage rating of 600V, it stands out due to its enhanced efficiency and reliability. The advanced super junction technology provides unparalleled performance, particularly in soft switching applications such as phase shift full bridge converters and LLC resonant topologies. The optimisation of gate charge and reverse recovery characteristics significantly reduces losses, thereby boosting the overall performance of power systems. This product is an ideal choice for industries demanding robust electrical performance, such as server ecosystems, telecommunications, and electric vehicle charging.

Optimised for soft switching topologies
Low gate charge enables faster switching
Superior reverse recovery improves performance
Designed for high reliability and uptime
Increases power density and saving space
Qualified per JEDEC standards for industry

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